Nitrogen-implanted SiC diodes using high-temperature implantation
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (12) , 639-641
- https://doi.org/10.1109/55.192870
Abstract
6H-SiC diodes fabricated using high-temperature nitrogen implantation up to 1000 degrees C are reported. Diodes were formed by RIE etching a 0.8- mu m-deep mesa across the N/sup +//P junction using NF/sub 3//O/sub 2/ with an aluminum transfer mask. The junction was passivated with a deposited SiO/sub 2/ layer 0.6 mu m thick. Contacts were made to N/sup +/ and P regions with thin nickel and aluminum layers, respectively, followed by a short anneal between 900 and 1000 degrees C. These diodes have reverse-bias leakage at 25 degrees C as low as 5*10/sup -11/ A/cm/sup 2/ at 10 V.Keywords
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