A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (6) , 212-214
- https://doi.org/10.1109/55.286695
Abstract
A vertically integrated one transistor memory cell, in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor, based on the wide-bandgap semiconductor silicon carbide (SiC), results in a greatly reduced thermal generation rate. Extrapolation of charge recovery data obtained at elevated temperatures suggests a room temperature recovery time of over 10/sup 6/ years.Keywords
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