A vertically integrated GaAs bipolar dynamic RAM cell with storage times of 4.5 h at room temperature
- 1 February 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (2) , 129-131
- https://doi.org/10.1109/55.144981
Abstract
The storage times of FET-accessed GaAs dynamic RAM cells are limited to less than 1 min at room temperature by gate leakage in the access transistor. These transistor leakage mechanisms have been eliminated by designing a vertically integrated DRAM cell in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor. Storage times of 4.5 h are obtained at room temperature, a 1000-fold increase over the best FET-accessed cells.Keywords
This publication has 3 references indexed in Scilit:
- A Vertically-Integrated Gaas Bipolar Dram CellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Increased thermal generation rate in GaAs due to electron-beam metallizationJournal of Applied Physics, 1992
- One-transistor GaAs MESFET- and JFET-accessed dynamic RAM cells for high-speed medium density applicationsIEEE Transactions on Electron Devices, 1990