Increased thermal generation rate in GaAs due to electron-beam metallization
- 1 May 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (9) , 4509-4514
- https://doi.org/10.1063/1.350795
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- One-transistor GaAs MESFET- and JFET-accessed dynamic RAM cells for high-speed medium density applicationsIEEE Transactions on Electron Devices, 1990
- Deep-level transient spectroscopy detection of defects created in epitaxial GaAs after electron-beam metallizationJournal of Applied Physics, 1988
- A thermal-generation-limited buried-well structure for room-temperature GaAs dynamic RAM'sIEEE Electron Device Letters, 1987
- Charge collection scanning electron microscopyJournal of Applied Physics, 1982
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975