A Vertically-Integrated Gaas Bipolar Dram Cell
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. IIIB_7-0_46
- https://doi.org/10.1109/drc.1991.664695
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Experimental measurement of bulk and edge generation in Al0.4Ga0.6As PiN structuresApplied Physics Letters, 1991
- One-transistor GaAs MESFET- and JFET-accessed dynamic RAM cells for high-speed medium density applicationsIEEE Transactions on Electron Devices, 1990