Experimental measurement of bulk and edge generation in Al0.4Ga0.6As PiN structures

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Abstract
A study of reverse‐bias leakage due to thermal generation in Al0.4Ga0.6As PiN junctions was conducted using the charge recovery transient technique on PiNiP storage capacitors. The relative importance of bulk generation and generation at the etched device periphery is documented, and the temperature dependence of both leakage mechanisms is presented. The experimental data suggest that the majority of bulk generation occurs at centers energetically near the middle of the band gap. In contrast, the temperature performance of the perimeter generation rate suggests that it is governed by surface states whose energy is 0.5 eV above or below midgap.