A GaAs memory device utilizing a buried JFET channel for nondestructive charge sensing
- 1 March 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (3) , 146-148
- https://doi.org/10.1109/55.144992
Abstract
A new GaAs memory cell consists of a monolithic element in which a P-i-N-i-P epitaxial structure stores charge and a buried p-channel FET senses charge. Measured storage times up to 40 s were observed at 300 K with minimal effects on charge decay for applied drain voltages of V/sub DS/=+or-1.5 V. Electrical write and erase techniques are demonstrated and discussed.Keywords
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