Improvement of GaAs/AlGaAs molecular beam epitaxial growth by a flux-interruption-and-annealing method using phase-locked reflection high-energy electron diffraction oscillation
- 15 March 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (6) , 2632-2635
- https://doi.org/10.1063/1.351058
Abstract
An exact two-dimensional molecular beam epitaxial growth of GaAs/AlGaAs layers has been achieved by using a flux-interruption-and-annealing method. This growth has been made possible by using phase-locked reflection high-energy electron diffraction oscillation during epitaxial growth. Quality of epitaxial layers grown by this method has been confirmed by photoluminescence and Fourier transform infrared spectroscopy measurements.This publication has 5 references indexed in Scilit:
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