Dry development of Se-Ge inorganic photoresist
- 1 January 1980
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (1) , 107-109
- https://doi.org/10.1063/1.91294
Abstract
Striking rate differences in gaseous plasma etching is found between undoped and Ag-photodoped Se-Ge inorganic photoresist. After the Ag photodoping, the plasma etch rate almost disappears and the etch rate ratio reaches 370:1. This leads to the ’’dry development’’ of the Se-Ge inorganic resists. It is shown that by using the plasma etching technique, fine pattern delineation of less than 1-μm linewidth is easily possible. Several advantages over wet chemical processing are expected in process simplification and reproducibility.Keywords
This publication has 5 references indexed in Scilit:
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