A sub- and near-threshold current model for silicon MESFETs
- 1 March 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (3) , 388-390
- https://doi.org/10.1109/16.2467
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- An analytical two-dimensional model for silicon MESFETsIEEE Transactions on Electron Devices, 1988
- A subthreshold current model for GaAs MESFET'sIEEE Electron Device Letters, 1987
- A large-signal GaAs MESFET model implemented on SPICEIEEE Circuits and Devices Magazine, 1985
- GaAs LSI-directed MESFET's with self-aligned implantation for n+-layer technology (SAINT)IEEE Transactions on Electron Devices, 1982
- A device model for an ion-implanted MESFETIEEE Transactions on Electron Devices, 1979
- Ion-implanted complementary MOS transistors in low-voltage circuitsIEEE Journal of Solid-State Circuits, 1972