Monolayer islands in an interrupted-growth type-II single quantum well
- 15 September 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (11) , 7818-7821
- https://doi.org/10.1103/physrevb.52.7818
Abstract
We have observed splittings in the luminescence and excitation spectra of a GaAs/AlAs type-II single quantum well with growth interruption at the interfaces. The splittings indicate the formation of large monolayer-smooth islands with a lateral extent much larger than the type-II indirect-exciton Bohr radius. Evidence for exciton diffusion between islands on a microsecond time scale is also presented.Keywords
This publication has 15 references indexed in Scilit:
- Interface excitons in staggered-line-up quantum wells: The AlAs/GaAs casePhysical Review B, 1993
- Modification of the microroughness of molecular-beam epitaxially grown GaAs/AlAs interfaces through changes in the growth temperatureJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Γ-Xz mixing in GaAs/AlAs superlattices of type IISolid State Communications, 1992
- Exciton radiative lifetime in short period GaAs-AlAs superlattices of type IISurface Science, 1990
- Radiative recombination mechanisms in staggered-alignment (GaAs)/(AlAs) heterostructuresPhysical Review B, 1989
- Subpicosecond real-space charge transfer in type-II GaAs/AlAs superlatticesPhysical Review Letters, 1989
- Optical investigation of the exciton transfer between growth islands of different well widths in GaAs/As quantum wellsPhysical Review B, 1989
- Dynamics of exciton transfer between monolayer-flat islands in single quantum wellsApplied Physics Letters, 1987
- Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlatticesPhysical Review B, 1987
- The influence of interface disorder on the electronic structure of a quantum well: A theoretical studySuperlattices and Microstructures, 1986