Subpicosecond real-space charge transfer in type-II GaAs/AlAs superlattices
- 17 April 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 62 (16) , 1892-1895
- https://doi.org/10.1103/physrevlett.62.1892
Abstract
We have directly measured the real-space transfer times associated with Γ→X intervalley scattering in type-II GaAs/AlAs superlattices by femtosecond optical pump and probe spectroscopy. We domonstrate that the scattering rate for this unique process connecting electron states in different slabs of the superlattice is related to the spatial overlap of the electronic envelope wave functions in different satellite minima.Keywords
This publication has 17 references indexed in Scilit:
- Band-edge states in short-period (GaAs/(AlAssuperlatticesPhysical Review B, 1989
- Hot-carrier energy-loss rates in GaAs/As quantum wellsPhysical Review B, 1988
- Real space transfer: Generalized approach to transport in confined geometriesSolid-State Electronics, 1988
- Optical properties and band structure of short-period GaAs/AlAs superlatticesJournal of Luminescence, 1987
- Intersubband relaxation in GaAs-As quantum well structures observed directly by an infrared bleaching techniquePhysical Review Letters, 1987
- Time-resolved Raman scattering in GaAs quantum wellsPhysical Review Letters, 1987
- Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopyPhysical Review Letters, 1987
- Zone folding, morphogenesis of charge densities, and the role of periodicity in GaAs-As (001) superlatticesPhysical Review B, 1986
- Femtosecond studies of intraband relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structuresApplied Physics Letters, 1984
- Picosecond dynamics of hot carrier relaxation in highly excited multi-quantum well structuresSolid State Communications, 1983