Real space transfer: Generalized approach to transport in confined geometries
- 30 April 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3-4) , 319-324
- https://doi.org/10.1016/0038-1101(88)90286-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodesJournal of Applied Physics, 1987
- Changes in the editorial boardIEEE Transactions on Electron Devices, 1987
- Band-Gap Engineering: From Physics and Materials to New Semiconductor DevicesScience, 1987
- A theory of enhanced impact ionization due to the gate field and mobility degradation in the inversion layer of MOSFET'sIEEE Electron Device Letters, 1986
- Resonant carrier capture by semiconductor quantum wellsPhysical Review B, 1986
- Negative differential resistance at 300 K in a superlattice quantum state transfer deviceApplied Physics Letters, 1984
- Novel real-space hot-electron transfer devicesIEEE Electron Device Letters, 1983
- Fast switching and storage in GaAs—AlxGa1-xAs heterojunction layersIEEE Electron Device Letters, 1982
- Hot electrons in layered semiconductorsPhysics Today, 1980
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980