Vibrational absorption bands for implanted nitrogen in crystalline silicon

Publisher Website
Google Scholar
Abstract
Infrared absorption bands for 15N in crystalline silicon have been observed for the first time. Isotopic substitution experiments were performed by N+ ion implantation into crystalline silicon to confirm the role of nitrogen in absorption bands at 764 and 962 cm−1 for 14N and at 748 and 937 cm−1 for 15N. Laser annealing increases the intensity of the higher frequency band. The 962-cm−1 band frequency is close to Si-N stretch frequencies for planar bonded N in crystalline Si3N4. It is suggested that the lower frequency band is associated with a mode that is made IR active by local distortion, consistent with a distorted substitutional N center identified by Brower in electron paramagnetic resonance studies on laser-annealed nitrogen-implanted Si.