Calculation of capacitance-voltage characteristics of hydrogenated amorphous silicon Schottky diodes
- 15 March 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6) , 487-489
- https://doi.org/10.1063/1.93152
Abstract
By adopting a new boundary condition appropriate to hydrogenated amorphous silicon diodes, and using the nonequilibrium Fermi–Dirac statistics, we predict a low-frequency capacitance-voltage relation which is quite different from that obtained by previous calculations in the literature, while in good agreement with more recent experimental results. The physical reasons for the differences are discussed.Keywords
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