Determination of the GaP-GaAs Solid Solution Interaction Parameter
- 16 December 1975
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 32 (2) , 631-638
- https://doi.org/10.1002/pssa.2210320237
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Calculation of regular solution interaction parameters in semiconductor solid solutionsJournal of Physics and Chemistry of Solids, 1973
- Thermodynamics and phase diagram calculations in II-VI and IV-VI ternary systems using an associated solution modelRevue de Physique Appliquée, 1973
- Phase equilibria in ternary III–V systemsProgress in Solid State Chemistry, 1972
- Calculation of ternary phase diagrams of III–V systemsJournal of Physics and Chemistry of Solids, 1972
- Zur Ermittlung der thermodynamischen Exzeßgrößen von AIII-BV-MischkritallenCrystal Research and Technology, 1972
- Spectroscopic Analysis of Cohesive Energies and Heats of Formation of Tetrahedrally Coordinated SemiconductorsPhysical Review B, 1970
- Ionicity of the Chemical Bond in CrystalsReviews of Modern Physics, 1970
- Liquid-Phase Epitaxy of In× GA1−×AsJournal of the Electrochemical Society, 1970
- A Quasi-Chemical Equilibrium Calculation of the Ge-Si-Sn and Ge-Si-Pb Ternary Phase DiagramsJournal of the Electrochemical Society, 1970
- The Ga-GaP-GaAs Ternary Phase DiagramJournal of the Electrochemical Society, 1970