Absolute efficiency and dispersion of Raman scattering by phonons in silicon

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1 October 1983

journal article
Published by Elsevier in Solid State Communications

Vol. 48 (3) , 301-303
https://doi.org/10.1016/0038-1098(83)90292-2

Abstract

No abstract available

Keywords

This publication has 7 references indexed in Scilit:

Excitation spectroscopy on the P, Q, R isoelectronic lines in indium doped silicon
Solid State Communications, 1981
Absolute Cross‐Section for Raman Scattering by Phonons in Silicon
Physica Status Solidi (b), 1980
Theoretical study of the Raman cross section and its pressure dependence in silicon
Solid State Communications, 1979
Resonant Raman scattering in silicon
Physical Review B, 1975
Selective resonant enhancement in the two-phonon Raman spectrum of Si and GaP
Solid State Communications, 1974
Resonance Raman Scattering at the Forbidden Yellow Exciton in ${Cu}_{2}$ O
Physical Review Letters, 1973
Resonant Cancelation of Raman Scattering from CdS and Si
Physical Review Letters, 1970