Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates
- 27 June 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 26 (7) , 438-440
- https://doi.org/10.1109/led.2005.851132
Abstract
In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area InGaP/GaAs HBTs fabricated on the substrates. The InGaP/GaAs HBTs realized on GOI substrates were compared with identical devices grown on bulk germanium substrates and similar devices on semi-insulating GaAs substrates.Keywords
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