High-Speed Germanium-on-SOI Lateral PIN Photodiodes
- 18 October 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 16 (11) , 2547-2549
- https://doi.org/10.1109/lpt.2004.835631
Abstract
We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 ×10-μm detectors with finger spacing S of 0.4 μm (0.6 μm) produced a -3-dB bandwidth of 29 GHz (27 GHz) at a bias voltage of -1 V. The detectors with S=0.6 μm had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 μA at -1-V bias.Keywords
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