Highly resolved excitonic spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor deposition
- 21 March 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (12) , 990-992
- https://doi.org/10.1063/1.99251
Abstract
We report the first observation of highly resolved photoluminescence and excitation spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor deposition. Luminescence linewidths as narrow as 0.5 meV, and negligible Stokes shifts between luminescence and excitation peaks are measured for samples with 80–280 Å GaAs wells and 20 Å Al0.3Ga0.7As barriers. Both free heavy and light hole exciton and neutral donor-bound exciton peaks are observed in luminescence; excitation and temperature dependence is studied over the ranges 0.28 mW/cm2–10 W/cm2 and 1.7–30 K, respectively. The bound exciton luminescence saturates with respect to that of free excitons at high excitation, and rapid dissociation into free excitons is observed as the temperature increases. The free exciton peaks broaden at high temperature, while the bound exciton peaks remain sharp.Keywords
This publication has 19 references indexed in Scilit:
- Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wellsApplied Physics Letters, 1986
- Bound excitons in Si-doped GaAs/Al0.22Ga0.78As single quantum wellsJournal of Applied Physics, 1985
- Molecular beam epitaxial growth and photoluminescence of near-ideal GaAs-AlxGa1−xAs single quantum wellsJournal of Applied Physics, 1985
- Optical transitions and acceptor binding energies in GaAs/AlxGa1−xAs single quantum well heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1985
- Temperature dependence of sharp line photoluminescence in GaAsAl0.25Ga0.75As multiple quantum well structuresSolid State Communications, 1985
- Photoluminescence from “spike doped” hydrogenic donors in Al0.3Ga0.7As-GaAs quantum wellsSurface Science, 1984
- Sharp-line photoluminescence spectra from GaAs-GaAlAs multiple-quantum-well structuresPhysical Review B, 1984
- MOVPE Growth of Ga1-xAlxAs–GaAs Quantum Well HeterostructuresJapanese Journal of Applied Physics, 1982
- Impurity photoluminescence in GaAs/Ga1−xAlxAs multiple quantum wellsSolid State Communications, 1982
- Bound excitons in p-doped GaAs quantum wellsSolid State Communications, 1982