The Diffusion of Phosphorus and Indium into Gallium Arsenide from Polycrystalline-Silicon
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- The Polycrystalline‐Si Contact to GaAsJournal of the Electrochemical Society, 1986
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- On models of phosphorus diffusion in siliconJournal of Applied Physics, 1983
- Phosphorus diffusion in gallium arsenideSolid-State Electronics, 1976
- Vapour pressures of arsenic over InAs(c) and GaAs(c). The enthalpies of formation of InAs(c) and GaAs(c)The Journal of Chemical Thermodynamics, 1974