Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W
- 1 August 1989
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 4 (4) , 815-820
- https://doi.org/10.1557/jmr.1989.0815
Abstract
The thin-film interactions of Al with refractory metals (Co, Cr, Mo, Ta, Ti, and W) have been investigated. The composition and thickness of the reacted aluminide layers were determined by Rutherford backscattering and phase identification was made by x-ray diffraction. Scanning electron microscopy was used to examine the lateral uniformity. The initial aluminide phases to grow are the Al-rich phases: Co2Al9, Cr2Al13, MoAl12, TaAl3, TiAl3, and WAI12. These are the most Al-rich phases on the phase diagrams. The reaction temperatures varied between 350 and 525 °C.Keywords
This publication has 22 references indexed in Scilit:
- Reaction of evaporated Ti films with large-grained Al substratesApplied Physics A, 1988
- Aluminium-Transition Metal Thin-Film ReactionsMRS Proceedings, 1988
- Interfacial reaction-induced morphological instabilities in thin Al/Pt and Al/Pd filmsJournal of Materials Research, 1987
- The formation of titanium, chromium, niobium and zirconium aluminides in thin films for interconnectionsThin Solid Films, 1987
- Diffusion markers in thin-film VAl3, Co2Al9, CrAl7, MoAl12, and Ni3Al formationJournal of Materials Research, 1986
- Diffusion markers in Al/metal thin-film reactionsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Solute effect of Cu on interdiffusion inTi compound filmsPhysical Review B, 1985
- Algorithms for the rapid simulation of Rutherford backscattering spectraNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Effect of Cu on the Kinetics and Microstructure of Al3Ti FormationJournal of the Electrochemical Society, 1985
- Thin Films—Interdiffusion and ReactionsJournal of the Electrochemical Society, 1979