Compensating donors in Cu(In,Ga)Se2 absorbers of solar cells
- 1 June 2005
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 480-481, 322-326
- https://doi.org/10.1016/j.tsf.2004.11.205
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- The ‘defected layer’ and the mechanism of the interface-related metastable behavior in the ZnO/CdS/Cu(In,Ga)Se2 devicesThin Solid Films, 2003
- Distinguishing metastable changes in bulk CIGS defect densities from interface effectsThin Solid Films, 2003
- Interface study of CuInSe2/ZnO and Cu(In,Ga)Se2/ZnO devices using ALD ZnO buffer layersThin Solid Films, 2003
- Classification of metastabilities in the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se2 solar cellsThin Solid Films, 2001
- Baseline Cu(In,Ga)Se2 device production: Control and statistical significanceSolar Energy Materials and Solar Cells, 2001
- The effect of NaF on Cu(In,Ga)Se2 thin film solar cellsSolar Energy Materials and Solar Cells, 2000
- Electronic properties of Cu(In,Ga)Se 2 heterojunction solar cells-recent achievements, current understanding, and future challengesApplied Physics A, 1999
- Model for electronic transport in Cu(In,Ga)Se2 solar cellsProgress In Photovoltaics, 1998
- Distinction between bulk and interface states in CuInSe2/CdS/ZnO by space charge spectroscopyJournal of Applied Physics, 1998
- Deep defect structure and carrier dynamics in amorphous silicon and silicon-germanium alloys determined by transient photocapacitance methodsJournal of Non-Crystalline Solids, 1992