Defect-induced island formation in CdSe/ZnSe structures
- 2 June 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 214-215, 727-731
- https://doi.org/10.1016/s0022-0248(00)00188-3
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Peculiarities of migration-enhanced-epitaxy (MEE) versus molecular beam epitaxy (MBE) growth kinetics of CdSe fractional monolayers in ZnSeJournal of Crystal Growth, 1999
- CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasersApplied Physics Letters, 1999
- TEM studies of self-organization phenomena in CdSe fractional monolayers in a ZnSe matrixThin Solid Films, 1998
- Self-Organizing Process of Moderately Strained Zn1-xCdxSe Layer Grown on GaAs(110) by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1998
- Single zero-dimensional excitons in CdSe/ZnSe nanostructuresApplied Physics Letters, 1998
- Enhanced Nucleation and Enrichment of Strained-Alloy Quantum DotsPhysical Review Letters, 1998
- Threading Dislocations in Multilayer Structure of InAs Self-Assembled Quantum DotsJapanese Journal of Applied Physics, 1998
- Growth and excitonic properties of single fractional monolayer CdSe/ZnSe structuresJournal of Applied Physics, 1998
- Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrixApplied Physics Letters, 1998
- Self-assembled island formation in heteroepitaxial growthApplied Physics Letters, 1997