Measuring and interpreting the lifetime of silicon wafers
Top Cited Papers
- 1 January 2004
- journal article
- Published by Elsevier in Solar Energy
- Vol. 76 (1-3) , 255-262
- https://doi.org/10.1016/j.solener.2003.07.033
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Validity of simplified Shockley-Read-Hall statistics for modeling carrier lifetimes in crystalline siliconPhysical Review B, 2003
- Characterisation and Diagnosis of Silicon Wafers and DevicesPublished by Elsevier ,2003
- Recombination at the interface between silicon and stoichiometric plasma silicon nitrideSemiconductor Science and Technology, 2002
- Very low bulk and surface recombination in oxidized silicon wafersSemiconductor Science and Technology, 2001
- Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductorsJournal of Applied Physics, 1999
- The effect of emitter recombination on the effective lifetime of silicon wafersSolar Energy Materials and Solar Cells, 1999
- Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocityJournal of Applied Physics, 1987
- Trapping of Minority Carriers in Silicon. I.-Type SiliconPhysical Review B, 1955
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952