OMVPE of GaInAs on a spinning substrate
- 29 February 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 87 (2-3) , 201-204
- https://doi.org/10.1016/0022-0248(88)90165-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructuresJournal of Crystal Growth, 1986
- In situ characterization of MOCVD growth processes by light scattering techniquesJournal of Crystal Growth, 1986
- An analytical study of the Chemical Vapor Deposition (CVD) processes in a rotating pedestal reactorJournal of Crystal Growth, 1986
- Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactorJournal of Crystal Growth, 1984
- Low pressure metalorganic chemical vapor deposition of InP and related compoundsJournal of Electronic Materials, 1983
- Investigations on low temperature mo-cvd growth of GaAsJournal of Electronic Materials, 1983