An analytical study of the Chemical Vapor Deposition (CVD) processes in a rotating pedestal reactor
- 24 July 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 76 (1) , 199-208
- https://doi.org/10.1016/0022-0248(86)90025-4
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- A flow channel reactor for GaAs vapor phase epitaxyJournal of Crystal Growth, 1982
- Emergence of a periodic mode in the so-called turbulent region in a circular Couette flowJournal de Physique Lettres, 1982
- Computational simulation of the melt flow during Czochralski growthJournal of Crystal Growth, 1978
- Analysis of Transport Processes in Vertical Cylinder Epitaxy ReactorsJournal of the Electrochemical Society, 1977
- Gas Flow Pattern and Mass Transfer Analysis in a Horizontal Flow Reactor for Chemical Vapor DepositionJournal of the Electrochemical Society, 1972
- A Quantitive Calculation of the Growth Rate of Epitaxial Silicon from SiCl4 in a Barrel ReactorJournal of the Electrochemical Society, 1972
- Application of the finite element method to mass transport limited epitaxial growth processJournal of Crystal Growth, 1971
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970
- On microzone melting InSb thin filmsSolid-State Electronics, 1969
- The Effects of Gas Pressure and Velocity on Epitaxial Silicon Deposition by the Hydrogen Reduction of Chlorosilanes†International Journal of Electronics, 1967