Effect of Very Thin SiC Layer on Heteroepitaxial Growth of Cubic GaN on Si (001)

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Abstract
We have investigated the effect of very thin SiC layer formation on Si (001) for cubic GaN growth by RF plasma-assisted molecular beam epitaxy. It is found that a cubic GaN film can be epitaxially grown on Si (001) covered with an approximately 2.5-nm-thick cubic SiC layer, while GaN grown on Si (001) without such an SiC layer results in the polycrystal growth of a predominantly hexagonal phase. In the latter case, an approximately 1-nm-thick amorphous Si layer is formed at the interface between GaN and Si by the irradiation of nitrogen plasma.