Growth and investigation of the big area Lely-grown substrates
- 1 April 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 46 (1-3) , 291-295
- https://doi.org/10.1016/s0921-5107(96)01996-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Measurement of electrophysical properties of silicon carbide epitaxial filmsDiamond and Related Materials, 1994
- Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open systemMaterials Science and Engineering: B, 1992
- Investigation of growth processes of ingots of silicon carbide single crystalsJournal of Crystal Growth, 1978