Equivalence of Radiation Particles for Permanent Damage in Semiconductor Devices
- 1 January 1963
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 10 (5) , 54-59
- https://doi.org/10.1109/tns.1963.4323304
Abstract
Selected transistors and diodes have been irradiated by various types and energies of dislocating radiation. Irradiation by protons of 10-Mev, neutrons of a reactor spectrum, electrons of 5, 10, and 25-Mev, gamma rays from cobalt-60, and bremsstrahlung from stopping of 5-Mev electrons are discussed. Passive and dynamic monitoring of permanent radiation damage was performed for exposures ranging from "threshold" to failure doses, utilizing various exposure rates. Changes in transistor forward current gain and changes in diode lifetime are presented in terms of integrated "particle" flux. From such analysis, the feasibility of ascribing an equivalence of radiation particles for aermanent damage in transistors and diodes has been successfully shown. Comparative damage curves, correlations of operational degradation with defect densities, and preliminary equivalences are presented.Keywords
This publication has 3 references indexed in Scilit:
- Surface Effects of Radiation on Transistors*Bell System Technical Journal, 1963
- Irradiation Damage in Germanium and Silicon due to Electrons and Gamma RaysJournal of Applied Physics, 1959
- The Effect of Nuclear Radiation on Selected Semiconductor DevicesProceedings of the IRE, 1957