Semiconductor Properties of Thin and Thick Film Ga2O3 Ceramic Layers
- 31 December 1998
- journal article
- Published by Elsevier in Journal of the European Ceramic Society
- Vol. 18 (14) , 2217-2226
- https://doi.org/10.1016/s0955-2219(98)00160-5
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Enhancement of sensitivity and conductivity of semiconducting Ga2O3 gas sensors by doping with SnO2Sensors and Actuators B: Chemical, 1998
- A selective CH4 sensor using semiconducting Ga2O3 thin films based on temperature switching of multigas reactionsSensors and Actuators B: Chemical, 1995
- Effect of the sensor structure on the stability of Ga2O3 sensors for reducing gasesSensors and Actuators B: Chemical, 1994
- Lambda measurement with Ga2O3Sensors and Actuators B: Chemical, 1994
- Improvements in Ga2O3 sensors for reducing gasesSensors and Actuators B: Chemical, 1993
- Oxygen sensing with long-term stable Ga2O3 thin filmsSensors and Actuators B: Chemical, 1991
- Gallium oxide thin films: A new material for high-temperature oxygen sensorsSensors and Actuators B: Chemical, 1991
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- The crystal structure of gallium dichlorideJournal of Inorganic and Nuclear Chemistry, 1957
- Über die Kristallstruktur des GaSZeitschrift für anorganische und allgemeine Chemie, 1955