Deformation mode in silicon, slip or twinning?
- 1 November 1987
- journal article
- Published by Elsevier in Scripta Metallurgica
- Vol. 21 (11) , 1463-1468
- https://doi.org/10.1016/0036-9748(87)90284-5
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Velocity of twinning partial dislocations in siliconJournal of Applied Physics, 1987
- Analysis of the effective stresses acting on twinning partial dislocations in siliconJournal of Applied Physics, 1987
- Indentation plasticity and polarity of hardness on {111} faces of GaAsPhilosophical Magazine Part B, 1985
- The plastic deformation of silicon between 300°C and 600°CPhilosophical Magazine A, 1981
- The movement of dissociated dislocations in the diamond-cubic structureActa Metallurgica, 1978
- On the mobility of partial dislocations in siliconPhilosophical Magazine, 1977
- Electron microscope investigation of the microplastic deformation mechanisms of silicon by indentationPhysica Status Solidi (a), 1972
- Emissary dislocations: Theory and experiments on the propagation of deformation twins in α-ironActa Metallurgica, 1962
- Deformation twinning in face-centred cubic metalsPhilosophical Magazine, 1961
- LX. A mechanism for the growth of deformation twins in crystalsJournal of Computers in Education, 1951