Size modification of self-assembled InAs quantum dots byin situetching
- 1 November 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (11) , 1341-1345
- https://doi.org/10.1088/0268-1242/13/11/001
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Structural and optical properties of vertically aligned InP quantum dotsApplied Physics Letters, 1997
- Modulated-beam studies of the layer-by-layer etching of GaAs(0 0 1) using AsBr3: identification of the reaction mechanismJournal of Crystal Growth, 1997
- Self-Organization in Growth of Quantum Dot SuperlatticesPhysical Review Letters, 1996
- InAs–GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization PropertiesJapanese Journal of Applied Physics, 1996
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Reentrant Layer-by-Layer Etching of GaAs(001)Physical Review Letters, 1995
- Nanoscale InP islands embedded in InGaPApplied Physics Letters, 1995
- Study of the two-dimensional–three-dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum-sized structuresApplied Physics Letters, 1994
- MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structuresSuperlattices and Microstructures, 1994