Modulated-beam studies of the layer-by-layer etching of GaAs(0 0 1) using AsBr3: identification of the reaction mechanism
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 1284-1288
- https://doi.org/10.1016/s0022-0248(96)00831-7
Abstract
No abstract availableKeywords
Funding Information
- Ministerio de Educación, Cultura y Deporte
- Engineering and Physical Sciences Research Council (GR/J 97540)
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