Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9As
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4) , 57-68
- https://doi.org/10.1016/0022-0248(90)90339-m
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Surface chemical kinetics during the growth of GaAs by chemical beam epitaxyJournal of Crystal Growth, 1989
- From chemical vapor epitaxy to chemical beam epitaxyJournal of Crystal Growth, 1989
- Observations on intensity oscillations in reflection high-energy electron diffraction during chemical beam epitaxyApplied Physics Letters, 1987
- Gas source molecular beam epitaxy of InP, GaInAs and GaInAsPProgress in Crystal Growth and Characterization, 1986
- Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2Journal of the Electrochemical Society, 1985
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977
- The identification of species evolved in the evaporation of III-V compoundsJournal of Physics D: Applied Physics, 1974
- Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurementsSurface Science, 1974
- The evaporation of GaAs under equilibrium and non-equilibrium conditions using a modulated beam techniqueJournal of Physics and Chemistry of Solids, 1973
- Mass spectra of organoaluminium compoundsJ. Chem. Soc. A, 1969