Modulated molecular beam and RHEED studies of MBE and MOMBE growth
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4) , 81-86
- https://doi.org/10.1016/0022-0248(90)90342-i
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Analysis of GaAs MOMBE Reactions by Mass SpectrometryJapanese Journal of Applied Physics, 1989
- Decomposition of trimethylgallium on Si(100): Spectroscopic identification of the intermediatesSurface Science, 1989
- From chemical vapor epitaxy to chemical beam epitaxyJournal of Crystal Growth, 1989
- Laser-induced decomposition of triethylgallium and trimethylgallium adsorbed on gallium arsenide(100)The Journal of Physical Chemistry, 1989
- Kinetic Limits of Monolayer Growth on (001) Gaas by Organometallic Chemical-vapor DepositionPhysical Review Letters, 1988
- RHEED Intensity Observation during TEGa-As4 Alternate Supply Growth of GaAsJapanese Journal of Applied Physics, 1988
- Mechanism of surface reaction in GaAs layer growthSurface Science, 1987
- Kinetic and thermodynamic aspects of metal organic MBESurface Science, 1986
- Molecular beam epitaxyReports on Progress in Physics, 1985
- Evaluation of surface kinetic data by the transform analysis of modulated molecular beam measurementsSurface Science, 1974