GaAs/GaAlAs Heterojunction Bipolar Phototransistor for Monolithic Photoreceiver Operating at 140 Mbit/s
- 1 December 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 34 (12) , 1344-1348
- https://doi.org/10.1109/tmtt.1986.1133547
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Monolithic integrated photoreceiver implemented with GaAs/GaAlAs heterojunction bipolar phototransistor and transistorsElectronics Letters, 1986
- Reproducible low-resistivity AuMn ohmic contact for p -type GaAsElectronics Letters, 1985
- High-gain low-noise GaAlAs-GaAs phototransistorsElectronics Letters, 1983
- Phototransistors, APD-FET, and PINFET optical receivers for 1-1.6-µm wavelengthIEEE Transactions on Electron Devices, 1983