Abstract
Yttria-stabilized zirconia (YSZ) buffer layers have been sputter deposited onto various substrates including silicon and nickel alloy using ion-beam-assisted deposition (IBAD). This technique resulted in the formation of buffer layers which exhibit strong (100) phase growth as well as in-plane orientation as evidenced by X-ray diffraction measurements. Subsequent YBCO depositions on these films exhibit Tc values of 86 K and strong biaxial texture with the c axis normal to the surface. With further refinement, this technique may be used to fabricate the multilayer substrate structure needed for superconducting multichip modules.