Hall effect analysis on neutron irradiated high resistivity silicon
- 1 June 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 360 (1-2) , 131-133
- https://doi.org/10.1016/0168-9002(94)01710-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experimentsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Modeling and simulation of neutron induced changes and temperature annealing of Neff and changes in resistivity in high resistivity silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Fast neutron-induced changes in net impurity concentration of high-resistivity siliconIEEE Transactions on Nuclear Science, 1992