Characterization of Modulation Doped Pseudomorphic AlGaAs/InGaAs/GaAs Hemt Structures by Electron Beam Electroreflectance and Photoluminescence
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Piezoreflectance characterization of resonant tunneling and modulation-doped heterostructuresJournal of Electronic Materials, 1989
- Electron beam electroreflectance studies of GaAs and CdTe surfacesApplied Physics Letters, 1988
- Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown As/GaAs quantum wellsPhysical Review B, 1988
- Optical investigation of highly strained InGaAs-GaAs multiple quantum wellsJournal of Applied Physics, 1987
- PRESSURE—DEPENDENT MAGNETO—OPTIC MEASUREMENTS IN STRAINED—LAYER SUPERLATTICES AT LOW TEMPERATURESMRS Proceedings, 1985
- Band nonparabolicities, broadening, and internal field distributions: The spectroscopy of Franz-Keldysh oscillationsPhysical Review B, 1974
- Third-derivative modulation spectroscopy with low-field electroreflectanceSurface Science, 1973