Piezoreflectance characterization of resonant tunneling and modulation-doped heterostructures
- 1 May 1989
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (3) , 379-384
- https://doi.org/10.1007/bf02657986
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Piezoreflectance as a supplement to photoreflectance for nondestructive characterization of GaAs/AlxGa1−xAs multiple quantum wellsJournal of Applied Physics, 1988
- Tunneling escape rate of electrons from quantum well in double-barrier heterostructuresPhysical Review Letters, 1987
- Comparative Responses Of Electroreflectance And Photoreflectance In GaasPublished by SPIE-Intl Soc Optical Eng ,1987
- Electroreflectance And Photoreflectance Characterization Of The Space Charge Region In Semiconductors: Ito/Inp As A Model SystemPublished by SPIE-Intl Soc Optical Eng ,1987
- Piezomodulated electronic spectra of semiconductor heterostructures: GaAs/AlxGa1−xAs quantum well structuresApplied Physics Letters, 1987
- Photoreflectance modulation mechanisms in GaAs-As multiple quantum wellsPhysical Review B, 1987
- Investigation of quantum well and tunnel barrier growth by resonant tunnelingJournal of Materials Research, 1986
- Effect of an electric field on the luminescence of GaAs quantum wellsPhysical Review B, 1982
- Excitonic effect in the piezoreflectance of GaSbPhysica Status Solidi (b), 1970
- On the Semi‐Classical Theory of Piezoreflection and Magneto‐PiezoreflectionPhysica Status Solidi (b), 1970