Investigation of quantum well and tunnel barrier growth by resonant tunneling
- 1 April 1986
- journal article
- research article
- Published by Springer Nature in Journal of Materials Research
- Vol. 1 (2) , 337-342
- https://doi.org/10.1557/jmr.1986.0337
Abstract
We present the first known systematic mapping of quantum well and tunnel barrier thicknesses in a resonant tunneling structure by transport measurements. The technique derives a 1 Å averaged resolution for quantum well and barrier thicknesses, independently for the quantum well and adjacent tunnel barriers. Contour maps of the structure reveal an asymmetric shallow ring growth structure for one of the epilayers. Current-voltage characteristics and temperature dependence of the resonant tunneling structures will also be discussed.Keywords
This publication has 6 references indexed in Scilit:
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Quantum well oscillatorsApplied Physics Letters, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro-optic and microwave devicesApplied Physics Letters, 1981
- Tunneling in a finite superlatticeApplied Physics Letters, 1973