Growth of extremely uniform layers by rotating substrate holder with molecular beam epitaxy for applications to electro-optic and microwave devices
- 1 March 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (5) , 360-362
- https://doi.org/10.1063/1.92377
Abstract
Integrated optics and integrated microwave circuits require extremely uniform epitaxial layer thicknesses, composition profiles, and doping profiles. With a sample rotating mechanism, molecular beam epitaxy can for the first time prepare GaAs and AlxGa1−xAs layers with thickness variation of less than 1% over a lateral dimension of 5 cm. The variation of AlAs mole fraction of the Al0.3Ga0.7As over a 10‐cm2 area was less than 0.4%. The variation of the ’’pinch‐off’’ voltage for a field effect transistor structure was less than 1.4% over a 10‐cm2 wafer. These results represent the most uniform epitaxial layers ever prepared with any crystal growth technology.Keywords
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