Barrier-controlled low-threshold p n p n GaAs heterostructure laser

15 May 1977

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 30 (10) , 535-538
https://doi.org/10.1063/1.89225

Abstract

Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructure pnpn injection laser makes it possible to design Shockley diode lasers with low (3 kA/cm²) room‐temperature threshold currents.

Keywords

GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
THRESHOLD ENERGY
SCHOTTKY BARRIER DIODES
EMISSION SPECTRA
MODULATION
ALUMINIUM ARSENIDES
FABRICATION

This publication has 2 references indexed in Scilit:

The GaAs P-N-P-N laser diode
IEEE Journal of Quantum Electronics, 1974
Multilayer GaAs injection laser
IEEE Journal of Quantum Electronics, 1968