Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry
- 31 January 1990
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 5 (2) , 309-312
- https://doi.org/10.1016/0921-5107(90)90074-l
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100)Materials Science and Engineering: B, 1990
- Polar-on-nonpolar epitaxyJournal of Crystal Growth, 1987
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983