Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100)
- 31 January 1990
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 5 (2) , 275-278
- https://doi.org/10.1016/0921-5107(90)90068-m
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on SiSolid State Communications, 1986