Characterization and optimization of cerium dioxide films deposited by r.f. magnetron sputtering
- 10 December 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 221 (1-2) , 13-16
- https://doi.org/10.1016/0040-6090(92)90788-d
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The fabrication of metal–oxide–semiconductor transistors using cerium dioxide as a gate oxide materialJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Optical Absorption in Cerium Dioxide Thin FilmsPhysica Status Solidi (b), 1990
- Electrical conduction in thin films of CeO2/GeO2Journal of Materials Science, 1988
- Optical Absorption in Thin Films of Cerium Dioxide and Cerium Dioxide Containing Silicon MonoxidePhysica Status Solidi (b), 1986
- Properties of CeO_2 thin films prepared by oxygen-ion-assisted depositionApplied Optics, 1985
- Effects of oxygen content on the optical properties of tantalum oxide films deposited by ion-beam sputteringApplied Optics, 1985
- 4.4 Co-sputtered optical filmsVacuum, 1977
- Growth and characterization of doped ZrO2 and CeO2 films deposited by bias sputteringJournal of Vacuum Science and Technology, 1977