Zinc-enhanced beryllium redistribution in GaAs/GaAlAs grown by molecular beam epitaxy
- 11 April 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (15) , 1219-1221
- https://doi.org/10.1063/1.99163
Abstract
A study of the effect of zinc diffusion into beryllium- and silicon-doped GaAs/Ga0.7Al0.3As structures has been carried out. The beryllium dopant was found to diffuse very rapidly as a result of the presence of diffusing zinc, while the silicon remained unaffected. A mechanism is proposed whereby competition for the gallium sites causes the beryllium to move interstitially wherever zinc is present.Keywords
This publication has 3 references indexed in Scilit:
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- Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1985
- Control of Be diffusion in molecular beam epitaxy GaAsApplied Physics Letters, 1985