Sputtered atom ejection patterns from (100) Ge surfaces
- 1 March 1970
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 21 (171) , 519-531
- https://doi.org/10.1080/14786437008238436
Abstract
The sputtered atom ejection patterns from (100) Ge bombarded with 5, 10 and 15 kev Ar+ ions have been studied as a function of dose, dose rate and target temperature. An abrupt transition from a disordered to an ordered surface structure is observed at 330 ± 5°c, and this temperature is energy independent. Spot patterns showing preferential ejection along a 〈111〉 direction are obtained above the transition temperature. This has been interpreted as an assisted focusing sequence. The pattern further mirrors the symmetry of the (100) surface and the ejection process has been interpreted as a combination of focusing sequences and surface effects of the type suggested by Lehmann and Sigmund.Keywords
This publication has 19 references indexed in Scilit:
- Computer Simulation of SputteringJournal of Applied Physics, 1968
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- Atom Ejection Studies for Sputtering of SemiconductorsJournal of Applied Physics, 1966
- On the Mechanism of SputteringPhysica Status Solidi (b), 1966
- Eine Möglichkeit zur Unterscheidung zwischen der Wirkung fokussierender Stoßketten und der KanalleitungPhysica Status Solidi (b), 1964
- Temperature Dependence of Ejection Patterns in Ge SputteringJournal of Applied Physics, 1963
- Higher order momentum approximations in classical collision theoryThe European Physical Journal A, 1963
- Atom Ejection Patterns in Single-Crystal SputteringJournal of Applied Physics, 1960
- Damage to Silicon Produced by Bombardment with Helium IonsJournal of Applied Physics, 1957