The characterisation of metal-thin insulator-n-p+ silicon switching devices
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 767-770
- https://doi.org/10.1051/rphysap:019780013012076700
Abstract
Experiments are reported on the switching characteristics of MISS devices incorporating a thin (< 50 Å) oxide layer, including the influence of a modulating base current, the effect of temperature and the dynamic performance. A quantitative analysis of a regenerative model of switching is briefly described and shown to give a good account of the experimental resultsKeywords
This publication has 4 references indexed in Scilit:
- The influence of surface states on the electrical characteristics of tunneling MIS Schottky barriersPhysica Status Solidi (a), 1978
- A theoretical description of tunneling MIS device transportPhysica Status Solidi (a), 1976
- Silicon p−n insulator-metal (p-n-I-M) devicesSolid-State Electronics, 1976
- Thin-MIS-Structure Si Negative-Resistance DiodeApplied Physics Letters, 1972